Again the film thickness is dependent on the anodizing voltage.

The dry film thickness can then be calculated from the measurement.

As already stated, film thickness and throwpower are dependent on the application voltage.

On the other hand, the capacitance decreases linearly with increased film thickness.

If the film thickness is on the order of the wavelength of light, then interference can occur.

To account for this underestimation, the idea of a statistical film thickness, t, has often been invoked.

The notion is important, since the higher the frost line, the more difficult to control the uniformity of the film thickness.

A map of the film thickness across the entire wafer can then be generated and used for quality control purposes.

Even with high manufacturing tolerances, the actual wet film thickness can vary from 50% to 90% of the gap.

In order for oxide films to work properly, the film thickness and uniformity are critical.