epitaxially

Single layers of graphite were previously (starting from the 1970s) grown epitaxially on top of other materials.

ZnO nanowires are grown epitaxially on the substrate and assemble into monolayer arrays.

They cite several papers in which graphene or ultra-thin graphitic layers were epitaxially grown on various substrates.

He later refined the idea using multiple epitaxially grown silicon layers for each of the vertically stacked color-detecting photodiodes.

HgTe can also be grown epitaxially, for example, by sputtering or by metalorganic vapour phase epitaxy.

The most important aspect of MBE is the deposition rate (typically less than 3000 nm per hour) allows the films to grow epitaxially.

The wetting layer is epitaxially grown onto a surface using a molecular beam epitaxy (MBE) chamber at high temperatures.

Recently, donnayite has been discovered along with ewaldite, epitaxially intergrown, in crystals from the Narssarssuk pegmatite in South Greenland.

Veeco's automated process equipment for Molecular Beam Epitaxy brings ultra-precision epitaxially grown wafers to expanding applications in the wireless market.

For example, during the production of high brightness light emitting diodes, gallium or other group III-V elements are epitaxially deposited onto a single crystal silicon substrate.

These atoms then migrate to the appropriate lattice site and deposit epitaxially by associating with a group V atom that was derived from the thermal decomposition of the hydrides.

In experimental physics, a wetting layer is an initial layer of atoms that is epitaxially grown on a surface upon which self-assembled quantum dots or thin films are created.

This information is used throughout the semiconductor production chain, and begins with evaluating epitaxially grown crystals, including parameters such as average doping concentration, doping profiles, and carrier lifetimes.

In VCSELs, the mirrors are typically grown epitaxially as part of the diode structure, or grown separately and bonded directly to the semiconductor containing the active region.

Epitaxially grown thin film crystalline aluminium nitride is also used for surface acoustic wave sensors (SAWs) deposited on silicon wafers because of the AlN's piezoelectric properties.

InSb can be grown by solidifying a melt from the liquid state (Czochralski process), or epitaxially by liquid phase epitaxy, hot wall epitaxy or molecular beam epitaxy.

Stranski-Krastanov growth (SK growth, also Stransky-Krastanov or Stranski-Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface.

Tint etched surfaces, where a thin film (such as a sulfide, molybdate, chromate or elemental selenium film) is grown epitaxially on the surface to a depth where interference effects are created when examined with BF producing color images, can be improved with PL.

In 2003 the discovery of large ferroelectric polarization in epitaxially grown thin films of BiFeO and the discovery of strong magnetic and electric coupling in orthorhombic TbMnO and TbMnO re-stimulated activity in the field of multiferroics.