epitaxial film

The resulting vacuum was used to study epitaxial film growth.

This behaviour is very different to that of an epitaxial film with no grain boundary.

Epitaxial films may be grown from gaseous or liquid precursors.

The overlayer is called an epitaxial film or epitaxial layer.

He has been experimenting with thin films (epitaxial films) and exploring applications for use in interfacing and imaging.

In this presentation, the preparation of thin epitaxial films of InSb by magnetron sputtering will be discussed.

Molecular-beam epitaxy is a technique used to construct thin epitaxial films of materials ranging from oxides to semiconductors to metals.

If an epitaxial film is deposited on a substrate of the same composition, the process is called homoepitaxy; otherwise it is called heteroepitaxy.

The Lambert W function was employed in the field of epitaxial film growth for the determination of the critical dislocation onset film thickness.

Changes in the electrophysical and photoelectrical properties of epitaxial films of Hg1−xCdxTe (x ≈ 0.2) due to laser annealing are studied.

The growth of large boules, however, remains quite difficult using this method, and it is better suited to the creation of epitaxial films with uniform polytype structures.

Thin epitaxial films of ZnSe were grown on GaAs substrates by a pulsed metalorganic chemical-vapour disposition technique.

Using MEIS he co-invented "surfactant-mediated epitaxial growth," a technique which allows much- improved control over the morphology of epitaxial films and superlattices.

Juhasz, Epitaxial films of PbTe, PbSe and PbS grown on mica substrates, Brit.

An analysis of film thickness dependency of the resistivity of LCMO epitaxial films under pressure and magnetic field has been performed by taking into account substrate contributions.

"Periodic microtwinning as a mechanism for the accommodation of the small mismatch between an epitaxial film and its substrate in the LSMO/STO system", Phil.

This is the calculated thickness of an epitaxial film, where due to thermodynamic principles the film will develop crystallographic dislocations in order to minimise the elastic energy stored in the films.

In this study, we report our experimental investigations of pressure and magnetic field dependencies of La2/3Ca1/3MnO3 (LCMO) epitaxial films with various thickness on SrTiO3 substrate.

The fully epitaxial film (red curve) shows a strongly peaked high MR; whereas the lower quality film (purple line) has a lower peak value, but shows a large magnetoresistance at low temperatures.

Epitaxial films are useful due to their ability to be produced with electrical properties different from those of the substrate, either higher purity, or fewer defects or with a different concentration of electrically active impurities as desired.

Trimethylaluminium (TMA1) has a number of applications in the electronics industry, including deposition of epitaxial films for AlGaAs, AlGaN and InAlGaP by metal organic chemical vapour deposition (MOCVD).

A few talks reflected the recent interest in thin films: they dealt with the morphology and defect structure of epitaxial films of electronic materials, and the microstructure of films of active materials with an eye towards microactuators.

Using those techniques, the studies have shed new light on the thermodynamics of epitaxial growth, the dynamic evolution of the surface morphology of epitaxial films, the self-assembly of quantum dots, the spatio-temporal character of first- and second-order phase transitions at surfaces, etc.

While more precise measurements have been obtained on single-crystal samples, such as the case of epitaxial InGaAs grown lattice-matched on InP, these results represent the best data for alloy compositions that cannot be synthesized as single-crystal epitaxial films for lack of the appropriate substrate.