Schaadt: Gold nanoparticles used for scattering and absorption of light on doped silicon obtaining 80% enhancements with 500 nm wavelength.

Very-long wave infrared (VLWIR): 12 to about 30 m, covered by doped silicon.

Instead, a layer of doped silicon is placed directly underneath the channel.

The doped silicon has a negative temperature coefficient, meaning that it conducts more current at higher temperatures.

Traditional photovoltaic cells are commonly composed by doped silicon and then depositing metallic contacts on the top and bottom.

Normal (p-n) diodes, which operate as described above, are usually made of doped silicon or, more rarely, germanium.

The natural progression from silicon to doped silicon to transistors to chips is what has made microprocessors and other electronic devices so inexpensive and ubiquitous in today's society.

Currently, most semiconductor diodes use doped silicon or germanium.

These are made from doped silicon and depend on the avalanche breakdown effect to detect even single photons.

In doped silicon, additional atoms change the balance, either adding free electrons or creating holes where electrons can go.