space-charge region

Under certain operating conditions, however, device operation may be dominated by recombination in the space-charge region.

When this highly non-symmetrical structure is reverse-biased, the space-charge region extends principally on the light-doped side, i.e. over the N layer.

Quasi-Fermi level variations occur as a response to carrier transport limitation by drift and diffusion within the space-charge region or by thermionic emission.

By optically modulating the number of carriers in space-charge region of the semiconductor, the contact angle of a liquid droplet can be altered in a continuous way.

A noise model for bipolar junction transistors based on generation–recombination (GR) noise originating from the traps located in the space-charge region of the emitter–base junction is derived.

This places the control electrode at a maximum distance from the space-charge region surrounding the filament, minimizing the amount of electrons collected by the control electrode, and thus minimizing the input current.

The ideality factor (also called the emissivity factor) is a fitting parameter that describes how closely the diode's behavior matches that predicted by theory, which assumes the p-n junction of the diode is an infinite plane and no recombination occurs within the space-charge region.