power semiconductor device

The conference handles various topics related to power semiconductor devices.

The same conversion tasks are now performed by solid state power semiconductor devices.

A power electronic module provides the physical containment for several power components, usually Power semiconductor devices.

The major breakthrough in power semiconductor devices is expected from the replacement of silicon by a wide band-gap semiconductor.

The one in Hazel Grove, Stockport specializes in power semiconductor devices.

The first power semiconductor device appeared in 1952 with the introduction of the power diode by R.N. Hall.

Dynex Semiconductor Ltd of Lincoln for high power semiconductor devices and assemblies.

Power semiconductor devices are discrete devices or integrated circuits intended for high current or high voltage applications.

The CuW75 alloy, with 75% of tungsten, is widely used in chip carriers, substrates, flanges and frames for power semiconductor devices.

It is chiefly used in microelectronics as substrate for power semiconductor devices and high density multi-chip modules, where it aids with removal of waste heat.

A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics; a switch-mode power supply is an example.

Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages.

B. Jayant Baliga is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly invention of the insulated gate bipolar transistor.

Furthermore, the PIN structure can be found in many power semiconductor devices, such as IGBTs, power MOSFETs, and thyristors.

Today this is of great interest to makers of silicon carbide (SiC) substrates which are used in a variety of industries such as power semiconductor devices for vehicles and high frequency communication devices.

The insulated-gate bipolar transistor or IGBT is a three-terminal power semiconductor device primarily used as an electronic switch and in newer devices is noted for combining high efficiency and fast switching.

ISPSD (International Symposium on Power Semiconductor Devices) is a conference held annually on power semiconductor devices.

Dynex Semiconductor based in Lincoln, United Kingdom is a global supplier of products and services specialising in the field of power semiconductor devices and silicon on sapphire integrated circuit products.

A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation.

Some power semiconductor devices have used beryllium oxide ceramic between the silicon chip and the metal mounting base of the package in order to achieve a lower value of thermal resistance than for a similar construction made with aluminium oxide.

Thermal resistance: This is an often ignored but extremely important parameter from the point of view of practical design; a semiconductor does not perform well at elevated temperature, and yet due to large current conduction, a power semiconductor device invariably heats up.

Electromigration can be a cause of degradation in some power semiconductor devices such as low voltage power MOSFETs, in which the lateral current through the source contact metallisation (often aluminium) can reach the critical current densities during overload conditions.

For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage.