n-type semiconductor

To see the effect, we consider a n-type semiconductor with the length d.

For example, positive Hall effect was observed in evidently n-type semiconductors.

A pointed metal wire is placed in contact with an n-type semiconductor.

This has already been done to individual nanowires to create p-type and n-type semiconductors.

In trace amounts, phosphorus is used as a dopant for n-type semiconductors.

Sulfur or tellurium are used as dopants to produce n-type semiconductors.

N-type semiconductors have a larger electron concentration than hole concentration.

SnO is usually regarded as an oxygen-deficient n-type semiconductor.

Furthermore, it appears that his work also anticipated the existence of p-type and n-type semiconductors by 60 years.

In fact, he had anticipated the existence of P-type and N-type semiconductors.

In n-type semiconductors inclusion of a group 5 element (eg As) provides extra electrons.

For example, n denotes an n-type semiconductor with a high, often degenerate, doping concentration.

The assumption of low level injection can be made regarding an n-type semiconductor, which affects the equations in the following way:

It is an n-type semiconductor.

In an n-type semiconductor, the dopant contributes extra electrons, dramatically increasing the conductivity.

The synthesis of n-type semiconductors may involve the use of vapor-phase epitaxy.

Likewise, in n-type semiconductors (which have only negative mobile charges, electrons), S is negative.

This material was then etched off in specific locations, and a chemical added that converted the nanotubes to n-type semiconductors.

N-Type semiconductor is manufactured by doping 'intrinsic' or pure semiconductor material.

ZnS can be doped as either an n-type semiconductor or a p-type semiconductor.

It is an n-type semiconductor where conductivity is attributed to oxygen diffusion into the solid from atmosphere.

In n-type semiconductors, electrons are the majority carriers and holes are the minority carriers.

Phosphorus is an n-type semiconductor (n for negative) while boron is p-type (positive).

An SCR consists of four layers of alternating p- and n-type semiconductor materials.

TlO is metallic with high conductivity and is a degenerate n-type semiconductor which may have potential use in solar cells.