molecular beam epitaxy

What makes this possible is a technology called molecular beam epitaxy.

Molecular beam epitaxy is an advanced form of thermal evaporation.

The future, he would say, lies not in plastics but in molecular beam epitaxy.

Molecular beam epitaxy allows a single layer of atoms to be deposited at a time.

He is known as the "father of molecular beam epitaxy"; a technique he developed at that facility in the late 1960s.

It can be found in Molecular beam epitaxy chambers to protect the growth areas from thermal radiation from hot sources.

Commercially, GaN crystals can be grown using molecular beam epitaxy.

It is also possible to construct layered materials with alternating compositions by techniques like molecular beam epitaxy.

Molecular beam epitaxy is also used for the deposition of some types of organic semiconductors.

Early examples used costly molecular beam epitaxy processes, but alternative inexpensive fabrication methods have been developed.

It was finally supplanted in the 1970s by molecular beam epitaxy and organometallic chemical vapor deposition.

The very thin heterostructures were made by W. Wiegmann using molecular beam epitaxy.

Molecular beam epitaxy takes place in high vacuum or ultra-high vacuum (10 Pa).

Kroemer became an early pioneer in molecular beam epitaxy, concentrating on applying the technology to untried new materials.

His research is related to molecular beam epitaxy (MBE).

However, the deposited films were still inferior to those obtained by other techniques such as chemical vapor deposition and molecular beam epitaxy.

Lately molecular beam epitaxy has been used to deposit oxide materials for advanced electronic, magnetic and optical applications.

Another variation of the bottom-up approach is molecular beam epitaxy or MBE.

These structures can be grown by molecular beam epitaxy or chemical vapor deposition with control of the layer thickness down to monolayers.

One of the key results from Chang's work in this period was using molecular beam epitaxy to grow superlattice structures in semiconductors.

Previous fabrication methods relied on expensive molecular beam epitaxy processes, but colloidal synthesis allows for cheaper manufacture.

In contrast to molecular beam epitaxy (MBE) the growth of crystals is by chemical reaction and not physical deposition.

Alfred Y. Cho, 卓以和, father of molecular beam epitaxy and quantum cascade lasers.

Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals.

Molecular beam epitaxy has been demonstrated to be capable of depositing structures consisting of piezoelectric and magnetostrictive components.