junction transistor

This resulted in the junction transistor, which was announced at a press conference on July 4, 1951.

These equations are based on the transport model for a bipolar junction transistor.

The first paper analyzing the use of bipolar junction transistors in the avalanche region.

The point of contact was called a junction, thus the name junction transistor.

Soon afterward, Shockley improved on their idea by developing a junction transistor.

The CK722 was the first low cost junction transistor available to the general public.

Morgan Sparks made the bipolar junction transistor into a practical device.

Silicon junction transistors were much more reliable than vacuum tubes and had longer, indefinite, service life.

There has been considerable debate over the characteristics of tubes versus bipolar junction transistors.

It would evolve into the bipolar junction transistor.

The bipolar junction transistor, unlike other transistors, is usually not a symmetrical device.

The example diagram shows bipolar junction transistors.

The analogous bipolar junction transistor circuit is the common-emitter amplifier.

General Electric pioneered the alloy junction transistor process for germanium transistors.

In bipolar junction transistors, the emitter current is sum of the collector and base currents.

The device is essentially a three-terminal bipolar junction transistor.

Diffused planar silicon bipolar junction transistor, used in some integrated circuits.

Some characteristics of point-contact transistors differ from the later junction transistor:

Used to model bipolar junction transistors.

July 5 - William Shockley invents the junction transistor.

Morgan Sparks, 91, American engineer, inventor of the first practical bipolar junction transistor.

They changed all the circuits to more reliable types of junction transistors, although it appears they may have built one example with the earlier designs.

The Gummel-Poon model is a model of the bipolar junction transistor.

Epitaxial transistor- a bipolar junction transistor made using vapor phase deposition.

GE engineers used a process called rate grown junction transistor, originally developed by Bell Labs.