forward bias

To force current through the diode a forward bias must be applied, as described next.

However, a side effect of this voltage is that it tends to forward bias the junction.

Current spikes at changeover from reverse to forward bias are a particular source of trouble.

Then, when a small forward bias is applied the current due to tunnelling is significant.

In this case, J1 and J3 are already forward biased.

When the switch is opened (off state, bottom of figure 2), the diode is forward biased.

Under forward bias, many thermally excited electrons in the semiconductor are able to pass over the barrier.

The forward bias causes a force on the electrons pushing them from the N side toward the P side.

As noted above, this photo voltage also forward biases the junction, and so reduces the pre-existing field in the depletion region.

In forward bias, electrons are injected into the p-material and holes into the n-material.

This can be achieved by applying a forward bias or reverse bias to the sample through the spotted gold contact.

In forward bias, besides the above depletion-layer capacitance, minority carrier charge injection and diffusion occurs.

When it is off, the diode is forward biased (we consider the continuous mode operation), therefore .

This reduction in resistance means that the emitter junction is more forward biased, and so even more current is injected.

With forward bias, the depletion region is narrow enough that electrons can cross the junction and inject into the P-type material.

The voltage drop V across the forward biased diode in the circuit of a passive rectifier is undesired.

Generally speaking, for usual current levels in forward bias, this capacitance far exceeds the depletion-layer capacitance.

The low current conducted under reverse bias and the large current under forward bias is an example of rectification.

A diffusion capacitance exists expressing the change in minority carrier charge that occurs with a change in forward bias.

If a sufficient forward bias is placed on this junction it will form a parasitic diode structure, and current will flow from base to collector.

The forward bias causes the circuit to operate in class-AB mode, so both transistors are slightly on during crossover.

Additionally, it doesn't describe the "leveling off" of the I-V curve at high forward bias due to internal resistance.

When forward biased, the ideal diode is simply a short circuit and when reverse biased, an open circuit.

(2) Forward bias (P positive with respect to N) narrows the depletion region and lowers the barrier to carrier injection.

The positive V forward biases this junction, triggering the parasistic npn bipolar transistor.