channel length

As the channel length becomes very short, these equations become quite inaccurate.

As a consequence, channel length should not exceed 10-15 metres.

This approximation ignores the Early effect (channel length modulation), among other things.

Here, the total device resistance is plotted as a function of the channel length:

We define stream power per unit channel length, so that term goes to 1, and the derivation is complete.

Thus fewer than thirty atoms would span the channel length, leading to substantial leakage.

Trout Creek has a drainage area of 106 square kilometers, and the main channel length is approximately 19.5 km long.

Multiple channel length synthesis achieves up to 30% leakage reduction.

The diode is a simple n+-n-n+ structure, the channel length being equal to 0.4 micron.

The main device dimensions are the channel length, channel width, and oxide thickness.

This increase is additional to the normal channel length modulation effect on output resistance, and cannot always be modeled as a threshold adjustment.

Therefore, the linear extrapolation of total resistance to the zero channel length provides the contact resistance.

As the channel length L is reduced to increase both the operation speed and the number of components per chip, the so-called short-channel effects arise.

The thickness of the fin (measured in the direction from source to drain) determines the effective channel length of the device.

Erosion measurements also were telemetered as channel lengths, which permitted estimates of the erosion rates.

As the channel length becomes smaller, the velocity is no longer saturated in the high field region, but it overshoots the predicted saturation velocity.

In this generation of the power management tool box, two channel lengths summarized in the table below were used for the speed vs. leakage trade-off.

Evidently, the dominant wavelength of the electromagnetic waves of R- and K-strokes is much larger than their channel lengths.

Thus, according to this simplified list of factors, an increased I requires a reduction in the channel length or an increase in the gate dielectric capacitance.

The channel length was 45-46 miles (c. 69 km, most of which was underground), and volume at the springs was 191,190 cubic metres in 24 hours.

Over 3000 m of channel were reconstructed with enhanced sinuosity, a raised channel elevation, reduced slope, and an overall increase in channel length.

Channel length modulation occurs in all field effect transistors, not just MOSFETs.

In textbooks, channel length modulation in active mode usually is described using the Shichman-Hodges model, accurate only for old technology:

Ogunpa River, a third-order stream with a channel length of 12.76 km and a catchment area of 54.92 km.

A properly designed NFT system is based on using the right channel slope, the right flow rate, and the right channel length.