N region

N regions are detected on each image of the M images in the dataset.

The N region attached to MT2 does not participate significantly.

A junction is formed between the p and n regions which is also called a depletion region.

As electrons diffuse, they leave positively charged ions (donors) in the n region.

T n regions are not affected by the antibiotic and that the major cleavage products correspond to the two GC steps.

N region addition is the addition of non-coded nucleotides during recombination by terminal deoxynucleotidyl transferase.

Each row and column intersects N regions and shares N cells with each.

The generated electron immediately moves into the N region, while the generated holes drift across the P region.

After joining p-type and n-type semiconductors, electrons from the n region near the p-n interface tend to diffuse into the p region.

Thus a P-dimensional vector h assigns one region of interest (out of N regions) to each model part (for P parts).

Due to the diffusion of charge carriers, the diffusion current, which flows from the p to n region, is exactly balanced by the equal and opposite drift current.

Type N regions are associated with transverse gravitational radiation, which is the type astronomers are trying to detect with LIGO.

The N region attached to MT2 is active, but the N region attached to MT1 only participates in the initial triggering, not the bulk current flow.

When a negative gate-source voltage (positive source-gate) is applied, it creates a p-channel at the surface of the n region, analogous to the n-channel case, but with opposite polarities of charges and voltages.

This electric field helps in speeding up of the transport of charge carriers from P to N region, which results in faster operation of the diode, making it a suitable device for high frequency operations.

NxN row-column grid partitioned into N regions, where each of the N rows, columns and regions have N cells and each of the N digits occur once in each row, column or region.

The "diffusion" in VDMOS refers to the manufacturing process: the P wells (see figure 1) are obtained by a diffusion process (actually a double diffusion process to get the P and N regions, hence the name double diffused).

The power diagram of a set of n circles C is a partition of the plane into n regions R (called cells), such that a point P belongs to R whenever circle C is the circle minimizing the power of P.