The devices are commonly called Mosfets (for metal-oxide semiconductor field-effect transistors).

This concept is an analogy to the structure of a metal-oxide semiconductor field-effect transistor (MOSFET) in electronic circuits.

The essential technology behind this breakthrough was the development of a type of transistor, the MOSFET, or metal-oxide semiconductor field-effect transistor (Figure 1).

University of California, Santa Barbara created high-performing III-V metal-oxide semiconductor field-effect transistors (MOSFET).

The EKV Mosfet Model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design.

The technologically most important thin amorphous film is probably represented by few nm thin SiO layers serving as isolator above the conducting channel of a metal-oxide semiconductor field-effect transistor (MOSFET).